论文
您当前的位置：首页科研成果论文
Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer
  • 作者
    Wu, Hao; Kang, Xuanwu; Zheng, Yingkui; Wei, Ke; Zhao, Rikang; Yuan, Yafei; Liu, Xinyu; Zhang, Guoqi
  • 刊物名称
    IEEE TRANSACTIONS ON ELECTRON DEVICES
  • 年、卷、文献号
    2022, , 0018-9383
  • 关键词
    Wu, Hao; Kang, Xuanwu; Zheng, Yingkui; Wei, Ke; Zhao, Rikang; Yuan, Yafei; Liu, Xinyu; Zhang, Guoqi
  • 摘要
    In this work, we investigate the soft breakdown (BD) behavior in thin-barrier (TB) AlGaN/GaN Schottky barrier diode (SBD) with carbon-doped GaN buffer. The soft BD behavior is the result of the coupling of multiple mechanisms. In the off-state, the ionized carbon (C) acceptors make the electric field (E-field) crowd at the cathode and cause the impact ionization. Then, the holes generated by impact ionization compensate with the ionized C acceptors, thus suppressing E-field crowding and preventing the further avalanche BD. The residual holes flow to and accumulate under the anode, which leads to a continuous increase in the Schottky E-field and Schottky leakage, eventually causing the soft BD. Due to the tunneling effect, Schottky leakage is highly sensitive to the Schottky E-field in TB structure, so the leakage rise rate during soft BD is abnormally high.

TOP