-
作者
Wu, Peng; Liu, Jianping; Jiang, Lingrong; Hu, Lei; Ren, Xiaoyu; Tian, Aiqin; Zhou, Wei; Ikeda, Masao; Yang, Hui
-
刊物名称
NANOMATERIALS
-
年、卷、文献号
2022, 12,
-
关键词
Wu, Peng; Liu, Jianping; Jiang, Lingrong; Hu, Lei; Ren, Xiaoyu; Tian, Aiqin; Zhou, Wei; Ikeda, Masao; Yang, Hui
-
摘要
Growth behaviors of GaN on patterned GaN substrate were studied herein. Spiral and nucleation growth were observed after miscut-induced atomic steps disappeared. The morphology of nucleation growth at different temperature is explained by a multi-nucleation regime introducing critical supersaturation. Simulated results based on a step motion model successfully explain the growth behaviors on stripes. These findings can be applied to control the surface kinetics of devices such as laser diodes grown on patterned substrate.