Wang, Yake; Chen, Jinping; Zeng, Yi; Yu, Tianjun; Guo, Xudong; Wang, Shuangqing; Allenet, Timothee; Vockenhuber, Michaela; Ekinci, Yasin; Zhao, Jun; Yang, Shumin; Wu, Yanqing; Yang, Guoqiang; Li, Yi

ACS OMEGA

2022, 7, 2470-1343

Wang, Yake; Chen, Jinping; Zeng, Yi; Yu, Tianjun; Guo, Xudong; Wang, Shuangqing; Allenet, Timothee; Vockenhuber, Michaela; Ekinci, Yasin; Zhao, Jun; Yang, Shumin; Wu, Yanqing; Yang, Guoqiang; Li, Yi

A series of t-butyloxycarbonyl (t-Boc) protected tetraphenylsilane derivatives (TPSi-Bocx, x = 60, 70, 85, 100%) were synthesized and used as resist materials to investigate the effect of t-Boc protecting ratio on advanced lithography. The physical properties such as solubility, film-forming ability, and thermal stability of TPSi-Bocx were examined to assess the suitability for application as candidates for positive-tone molecular glass resist materials. The effects of t-Boc protecting ratio had been studied in detail by electron beam lithography. The results suggest that the TPSi-Bocx resist with different t-Boc protecting ratios exhibit a significant change in contrast, pattern blur, and the density of bridge defect. The TPSi-Boc70% resist achieves the most excellent patterning capability. The extreme ultraviolet (EUV) lithography performance on TPSi-Boc70% was evaluated by using the soft X-ray interference lithography. The results demonstrate that the TPSi-Boc70% resist can achieve excellent patterning capability down to 20 nm isolated lines at 8.7 mJ/cm2 and 25 nm dense lines at 14.5 mJ/cm2. This study will help us to understand the relationship between the t-Boc protecting ratio and the patterning ability and supply useful guidelines for designing molecular resists.