A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique
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作者
POWER-AMPLIFIER; ALGORITHMIC DESIGN
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刊物名称
IEICE Electron. Express
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年、卷、文献号
2021, 18, 20210150
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关键词
POWER-AMPLIFIER; ALGORITHMIC DESIGN
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摘要
This paper presents a 79 GHz low noise amplifier (LNA) design featuring high gain fabricated in a 40-nm CMOS process. To make better use of active devices,we propose an inductor-embedded neutralization technique. The implemented prototype consists of four-stage common-source amplifiers using the proposed technique and transformer-based matching networks. The measurement results show that the amplifier realizes a peak gain of 23 dB at 79 GHz with 14.4mWpower dissipation and 0.4mm(2) area occupation. The LNA achieves a minimum noise figure (NF) of 6.3 dB.
