Improved V2OX Passivating Contact for p-Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiOX Tunnel Layer
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作者
HOLE-SELECTIVE CONTACTS; TRANSITION-METAL OXIDES; ULTRATHIN SIO2; WORK FUNCTION; PERFORMANCE; THICKNESS; OXIDATION; QUALITY; FILMS
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刊物名称
Adv. Mater. Interfaces
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年、卷、文献号
2021, 8, 2100989
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关键词
HOLE-SELECTIVE CONTACTS; TRANSITION-METAL OXIDES; ULTRATHIN SIO2; WORK FUNCTION; PERFORMANCE; THICKNESS; OXIDATION; QUALITY; FILMS
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摘要
Transition metal oxide (TMO) thin films featuring tunable work function, high transmittance, and simple fabrication process are expected to serve as carrier-selective transport layers for high-efficiency crystalline silicon (c-Si) solar cells. TMOs are prone to reaction or elemental migration with adjacent materials, which leads to uncontrollable optical and electrical properties. In this work, V2OX passivating contact, a promising hole transport layer (HTL) thanks to its high work function, is investigated and implemented in p-type c-Si solar cells. An ultrathin SiOX tunnel layer is intentionally introduced by UV/O-3 pretreatment to suppress the redox reaction at c-Si/V2OX interface. Both saturation current density and contact resistance are reduced with the presence of UV-SiOX due to the well tunned oxygen vacancies in SiOX and V2OX thin films. The power conversion efficiency (PCE) based on p-Si/UV-SiOX/V2OX/Ag rear contact achieves 21.01% with an increased open-circuit voltage of 635 mV and fill factor (FF) of 83.25%.
