Synthesis of nitrogen-doped graphene via pentachloropyridine as the sole solid source
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作者
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刊物名称
Appl. Phys. Lett.
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年、卷、文献号
2017, 111, 33106
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关键词
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摘要
The substitution of nitrogen atoms in the lattice plane of the graphene can adjust the electronic properties of the graphene to translate it from the half-metal to the n-type semiconductor. Here, we report a practicable growth of nitrogen-doped graphene films with the nitrogen atoms doped content of 4.4-7.5% by the sole solid precursor based chemical vapor deposition method. After the post-annealing process at high temperature, the morphology and crystallization quality of the nitrogen-doped graphene film were considerably improved. The as-synthesized nitrogen-doped graphene films exhibit typical n-type behavior with the electron carrier density of approximately 6.55 x 10(12) cm(-2) and the Hall mobility of around 522 cm(2)V(-1)s(-1). Published by AIP Publishing.
